PHYS 4801 Simulation Laboratory
Experiment 4Bench 4MZU-PE / EEA-4Ready

Fermi-Dirac Statistics and the Free Electron Model

Electron Energy Analyser

Cool and heat an electron gas in the cryostat and watch the occupation edge sharpen and smear.

Duration
3 hours
Kittel
Chapter 6
Topics
Free electron modelDensity of statesFermi energy

Energy analyser — occupation spectrum

Copper · E_F = 7.033 eV · T = 300 K

f(E), g(E) AND THE OCCUPIED DENSITY OF STATES
f(E) — occupationg(E) — density of statesf(E)·g(E) — occupied statesAnalyser slit

Fermi edge — expanded

Analyser zoomed onto the occupation edge

SPAN ±0.155 eV

Edge width (90→10%)

113.61meV

k_B from W / 4.394T

8.617e-5eV/K

Analyser readout

Channeltron detector · 0.5 s integration

Sample temperature
K
Fermi energy E_F
eV
Analyser energy
eV
f(E) at slit
Detector counts
c/sGAP
k_BT
meV
Derived

Fermi temperature

81612K

k_BT / E_F

0.368 %

Electronic C (Sommerfeld)

0.151J/mol·K

The standard reference metal, E_F ≈ 7 eV. Compare k_BT at 300 K with that: only a sliver of the distribution is disturbed.

Cryostat & analyser control

MZU-PE / EEA-4

Liquid helium cryostat. Do not open the shroud while the bath is below 120 K.

Sample
Temperature
Sample temperature300 K
CryoNormalHot
Analyser
Analyser energy7.000 eV

At any temperature f(E_F) = 0.5 exactly. Use it to check the analyser calibration.

Key Equations

f(E)=1e(EEF)/kBT+1f(E)=\frac{1}{e^{(E-E_F)/k_BT}+1}

At T=0T=0 this is a step. At finite TT it smears over a width of order kBTk_BT; measured between the 90% and 10% points the width is exactly

W=2kBTln9=4.394kBTW = 2k_BT\ln 9 = 4.394\,k_BT
EF=22m(3π2n)2/3,g(E)EE_F=\frac{\hbar^{2}}{2m}\left(3\pi^{2}n\right)^{2/3},\quad g(E)\propto\sqrt{E}

Procedure

0/4

Table 4 — Fermi edge measurements

0 entries

Park the slit on E_F to check f(E_F) = 0.5 before recording each new temperature.

#Samplen/ m⁻³E_F/ eVT/ Kk_BT/ meVf(E_F)Edge width/ meVk_B from W/ eV/Kk_BT/E_F/ %
No readings yet — set the controls, then press “Record reading”.

Analysis & Reflection

Analysis questions

  1. The electronic heat capacity of a metal is Cel=γTC_{el}=\gamma T with γ1/EF\gamma \propto 1/E_F. Using the fact that only electrons within about kBTk_BT of EFE_F can be excited, argue why CelT/EFC_{el}\propto T/E_F, and why that is so much smaller than the classical 32NkB\tfrac{3}{2}Nk_B.
  2. For copper at room temperature the bench reads kBT/EFk_BT/E_F of well under 1%. Explain why that means the conductivity of a metal changes only slightly with temperature, and say which part of the distribution actually carries the current.
  3. Compare potassium, sodium, silver, copper and aluminium. Aluminium contributes three electrons per atom rather than one. How does that show up in E_F?
  4. With silicon loaded, the counter reads background when the slit is inside the gap even though f(E) there is not zero. Why?
  5. Explain why raising the temperature increases the conductivity of a semiconductor but decreases it in a metal.

Physics problems

  1. Copper has EF=7.04E_F = 7.04 eV. Calculate the Fermi temperature TF=EF/kBT_F=E_F/k_B and explain why it shows that quantum statistics dominate in metals even at room temperature.
  2. Why can the Maxwell-Boltzmann distribution not be used for electrons in a metal? Which physical principle forces Fermi-Dirac statistics?
  3. Show that the mean kinetic energy of a free electron gas at T=0T=0 is Eˉ=35EF\bar E = \tfrac{3}{5}E_F, not zero. Why do the electrons have kinetic energy at absolute zero at all?
  4. From EF=22m(3π2n)2/3E_F=\frac{\hbar^2}{2m}(3\pi^2 n)^{2/3}, work out the electron density that would give EF=5E_F = 5 eV, and compare it with the samples in the rack.